• DocumentCode
    1419129
  • Title

    Germanium on silicon pin photodiodes for the near infrared

  • Author

    Masini, G. ; Colace, L. ; Assanto, G. ; Luan, H.C. ; Kimerling, L.C.

  • Author_Institution
    Dept. of Electron. Eng., Rome Univ., Italy
  • Volume
    36
  • Issue
    25
  • fYear
    2000
  • fDate
    12/7/2000 12:00:00 AM
  • Firstpage
    2095
  • Lastpage
    2096
  • Abstract
    Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4 A/W at 1.3 μm, dark currents below 20 mA/cm2 and response times shorter than 800 ps
  • Keywords
    dark conductivity; elemental semiconductors; germanium; infrared detectors; optical receivers; p-i-n photodiodes; silicon; 1.3 micrometre; 800 ps; Ge-Si; Si; dark currents; near infrared; overall performances; pin photodiodes; response times; short-circuit responsivities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001448
  • Filename
    891843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1419129