• DocumentCode
    14199
  • Title

    Realization of Low Driving Voltage in Organic Light-Emitting Diodes Using C60 as an Electron Transport Layer and Alq3 as a Buffer Layer

  • Author

    Xiao Ming Wu ; Xue Mu ; Yu Lin Hua ; Juan Juan Bai ; Li Wang ; Zhi Hui Xiao ; Ni Dong ; Shou Gen Yin

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Tianjin Univ. of Technol., Tianjin, China
  • Volume
    34
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    650
  • Lastpage
    652
  • Abstract
    Organic light-emitting diodes with low driving voltage based on fullerene (C60) as an electron transport layer and tris (8-hydroxyquinolinato)-aluminum (Alq3) as a buffer layer are successfully fabricated. For the optimal device with structures of ITO/NPB (40 nm)/Alq3 /(30 nm)/C60 (20 nm)/Alq3 (3 nm)/LiF (0.8 nm)/Al (120 nm), the turn-on driving voltage is 2.8 V, which is reduced 0.4 V compared with that of the control device. Meanwhile, the driving voltage of 4.9 V has been achieved at a luminance of 1000 cd/m2 in this device, which is reduced 1.8 V compared with that of the control device. The results have a significant effect on the commercialization application of the devices.
  • Keywords
    organic compounds; organic light emitting diodes; Alq3; C60; buffer layer; electron transport layer; fullerene; low driving voltage; organic light-emitting diode; tris (8-hydroxyquinolinato)-aluminum; ${rm C}_{60}$; low driving voltage; organic light-emitting diodes (OLEDs); ultrathin buffer layer;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2251600
  • Filename
    6496151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=14199