To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel

Author

Yaung, D.N. ; Fang, Y.K. ; Chen, C.H. ; Hung, C.C. ; Tsao, F.C. ; Wuu, S.G. ; Liang, M.S.

Author_Institution

VLSI Technol. Lab., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

22

Issue

1

fYear

2001

Firstpage

23

Lastpage

25

Abstract

In this letter, a short time low temperature oxidation of poly-Si channel has been studied to suppress the photoexcited current of the hydrogenated poly-Si TFTs. The effect of the treatment, which contains different-time oxidation and different-time post-hydrogenation, on the dark-current and photocurrent of poly-Si TFTs under off state were investigated in detail. An optimal combination of both technologies has been proposed according to the investigation. The poly-Si TFTs treated with the optimal process can be operated well under a high illumination environment.

Keywords

dark conductivity; elemental semiconductors; hydrogen; oxidation; photoconductivity; silicon; thin film transistors; Si:H; dark-current; different-time oxidation; different-time post-hydrogenation; hydrogenated polysilicon TFTs; low temperature oxidation; photocurrent; photoexcited current suppression; polychannel; Circuits; Councils; Flat panel displays; Grain boundaries; Leakage current; Lighting; Oxidation; Photoconductivity; Silicon compounds; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.892432

Filename

892432