Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length

Author

Gutierrez-Castrejon, R. ; Schares, Laurent ; Occhi, Lorenzo ; Guekos, George

Author_Institution

Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

36

Issue

12

fYear

2000

Firstpage

1476

Lastpage

1484

Abstract

A new frequency-domain wave-propagation model that includes a position- and time-dependent carrier lifetime and the effect of amplified spontaneous emission is introduced and used to accurately simulate recovery time experiments in 0.5- and 1.0-mm long semiconductor optical amplifiers. It is compared to a constant lifetime model at different saturation levels, showing better performance and consistency. The role of the amplified spontaneous emission in saturated amplifiers is also discussed.

Keywords

carrier lifetime; gain measurement; laser beams; laser theory; laser variables measurement; optical saturation; ridge waveguides; semiconductor optical amplifiers; superradiance; waveguide lasers; 0.5 mm; 1 mm; amplified spontaneous emission; consistency; constant lifetime model; frequency-domain wave-propagation model; longitudinal gain dynamics; measurement; modeling; performance; position-dependent carrier lifetime; recovery time experiments; saturated amplifiers; saturated semiconductor optical amplifiers; saturation levels; semiconductor optical amplifiers; time-dependent carrier lifetime; Charge carrier lifetime; Gain measurement; Nonlinear optical devices; Nonlinear optics; Optical amplifiers; Optical devices; Optical wavelength conversion; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.892569

Filename

892569