High-coupling-efficient 1.3-μm laser diodes with good temperature characteristics

Author

Fukano, Hideki ; Yokoyama, Kiyoyuki ; Kadota, Yoshiaki ; Kondo, Yasuhiro ; Ueki, Mineo ; Yoshida, Junichi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

32

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1959

Lastpage

1964

Abstract

We have proposed uniformly beam-expanded structures based on the advanced concept for realizing high coupling efficiency and good temperature characteristics. Beam expansion (optical confinement reduction) by narrowing the core layer width as well as a carrier confinement are strongly enhanced by adopting a larger bandgap InGaAsP for MQW barriers and separate confinement heterostructure layers. These laser diodes (LD´s) were fabricated by the conventional buried heterostructure laser process, which is very important in reducing the cost. Our results have proven the effectiveness of our proposition. The LD´s with high coupling efficiency (-3.2 dB) and good temperature characteristics have been achieved even using the simple approach of reducing optical confinement. The threshold currents at 25 and 85°C are 9.3 and 39.4 mA, respectively. The slope efficiency at 25°C is 0.39 W/A and still high (0.26 W/A) even at 85°C

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser transitions; optical fabrication; quantum well lasers; 1.3 mum; 25 degC; 39.4 mA; 85 degC; 9.3 mA; InGaAsP; MQW barriers; beam expansion; carrier confinement; conventional buried heterostructure laser process; core layer width; cost; good temperature characteristics; high-coupling-efficient 1.3-μm laser diodes; larger bandgap InGaAsP; laser diodes; optical confinement reduction; separate confinement heterostructure layers; slope efficiency; threshold currents; uniformly beam-expanded structures; Carrier confinement; Costs; Diode lasers; Laser beams; Optical beams; Optical coupling; Photonic band gap; Quantum well devices; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.541682

Filename

541682