• DocumentCode
    1423241
  • Title

    Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting

  • Author

    Jang, Jaejune ; Kan, Edwin C. ; Arnborg, Torkel ; Johansson, Ted ; Dutton, Robert W.

  • Author_Institution
    Stanford Univ., CA, USA
  • Volume
    33
  • Issue
    9
  • fYear
    1998
  • fDate
    9/1/1998 12:00:00 AM
  • Firstpage
    1428
  • Lastpage
    1432
  • Abstract
    A novel base ballasting scheme for interdigitated power RF bipolar transistors has demonstrated improved performance and thermal stability. The nonlinear ballast resistor in series with each base finger is implemented using a depletion-mode FET, which requires only minor modification in the fabrication process. Mixed-mode simulation, instead of analytical equations, is used for more accurate device characterization
  • Keywords
    UHF bipolar transistors; equivalent circuits; power bipolar transistors; semiconductor device models; thermal stability; RF power BJT; ballast resistor; depletion-mode FET; device characterization; interdigitated power bipolar transistors; mixed-mode simulation; nonlinear base ballasting; thermal stability; Analytical models; Bipolar transistors; Electronic ballasts; FETs; Fabrication; Fingers; Nonlinear equations; Radio frequency; Resistors; Thermal stability;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.711343
  • Filename
    711343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423241