Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie Variability

Author

Monga, Udit ; Aghassi, Jasmin ; Siprak, Domagoj ; Sedlmeir, Josef ; Hanke, Christian ; Kubrak, Volker ; Heinrich, Roland ; Fjeldly, Tor A.

Author_Institution

Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Kjeller, Norway

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

249

Lastpage

251

Abstract

In this letter, we present an experimental evaluation of self-heating (SH) effects (SHEs) using S-parameter measurements for both n- and p-type SOI FinFETs. It is revealed that NFETs show a stronger SHE than PFETs, which ultimately leads to a higher variation of the intrinsic gain in NFETs. Our results also show that long-channel devices typically used in analog design show pronounced negative output conductance, which consequently leads to a negative intrinsic gain at low frequencies. Another implication of the strong SHE is that the interdie variability of the isothermal intrinsic gain gets “amplified” at lower frequencies due to SH.

Keywords

MOSFET; S-parameters; analogue circuits; measurement systems; silicon-on-insulator; NFET; S-parameter measurements; SOI FinFET; analog circuits; analog design; interdie variability; intrinsic gain; isothermal intrinsic gain; long-channel devices; negative output conductance; self-heating effects; Interdie variability; SOI FinFETs; nonisothermal conductances; self-heating (SH);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2097235

Filename

5685797