Charge-control analysis of m.o.s. and junction-gate field-effect transistors

Useful expressions for the small-signal forward- and reverse-transfer parameters of metal-oxide-semiconductor and junction-gate field-effect transistors are derived from a simple unified charge-control analysis which is also applicable to the bipolar transistor. Basic parameters of field-effect and bipolar transistors are compared. It is shown that, although the physical mechanisms involved in the operation of these three types of transistor are distinctly different, their electrical equivalent-circuit representation and the significance of the associated parameters are identical.