Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma

Author

Lee, Jin-Woo ; Lee, Nae-In ; Jung-In Kan ; Han, Chul-Hi

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

18

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

172

Lastpage

174

Abstract

Polysilicon thin-film transistors (poly-Si TFT´s) with thin-gate oxide grown by electron cyclotron resonance (ECR) nitrous oxide (N/sub 2/O)-plasma oxidation is presented. ECR N/sub 2/O-plasma oxidation successfully incorporates nitrogen atoms at the SiO/sub 2//poly-Si interface, consequently forms a nitrogen-rich layer with Si/spl equiv/N bonds at a binding energy of 397.8 eV. ECR N/sub 2/O-plasma oxide grown on poly-Si films shows higher breakdown fields than thermal oxide. The fabricated poly-Si TFT´s with N/sub 2/O-plasma oxide show better performance than those with ECR O/sub 2/-plasma oxide, which results not only from the smooth interface but also oxygen- and nitrogen-plasma passivation.

Keywords

MOS capacitors; characteristics measurement; dielectric thin films; electric breakdown; elemental semiconductors; interface structure; nitridation; oxidation; passivation; silicon; surface topography; thin film transistors; ECR N/sub 2/O-plasma oxidation; I-V characteristics; MOS capacitors; N atom incorporation; N-rich layer; SIMS; Si; SiO/sub 2/-Si; SiO/sub 2//poly-Si interface; SiON-Si; TFT performance; binding energy; breakdown fields; plasma passivation; polysilicon thin-film transistor; smooth interface; surface roughness; thin-gate dielectric; transconductance characteristics; Cyclotrons; Dielectrics; Electric variables; Electrons; Oxidation; Resonance; Rough surfaces; Surface morphology; Surface roughness; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.568751

Filename

568751