DocumentCode
1425660
Title
Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template
Author
Kuo, Cheng-Huang ; Chang, Li-Chuan ; Chou, Hsiu-Mei
Author_Institution
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
Volume
24
Issue
7
fYear
2012
fDate
4/1/2012 12:00:00 AM
Firstpage
608
Lastpage
610
Abstract
In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
Keywords
III-V semiconductors; MOCVD coatings; gallium compounds; light emitting diodes; nanorods; wide band gap semiconductors; GaN:Si; current spreading improvement; light emitting diode; light output power; nanorod template; Conductivity; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Resistance; Substrates; Current spreading; InGaN/GaN; light-emitting diode (LED); nano;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2012.2185043
Filename
6134636
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