DocumentCode
1425900
Title
A Scalable Design Methodology for Energy Minimization of STTRAM: A Circuit and Architecture Perspective
Author
Chatterjee, Subho ; Rasquinha, Mitchelle ; Yalamanchili, Sudhakar ; Mukhopadhyay, Saibal
Author_Institution
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
19
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
809
Lastpage
817
Abstract
In this paper, we analyze the energy dissipation in spin-torque-transfer random access memory array (STTRAM). We present a methodology for exploring the design space to minimize the energy dissipation of the array while maintaining required read and write quality for a given magnetic tunnel junction technology. The proposed method shows the need for proper choice of the silicon transistor width and array operating voltage to minimize the energy dissipation of the STTRAM array. The write energy is found to be 10 × greater than read energy. Hence, read-write ratio becomes a crucial factor that determines energy for STTRAM last level caches (L2). An exploration is performed across several architectural benchmarks including shared and non-shared caches for detailed energy analysis.
Keywords
SRAM chips; integrated circuit design; magnetic tunnelling; STTRAM; array operating voltage; energy analysis; energy dissipation analysis; energy minimization; level caches; scalable design methodology; silicon transistor width; spin-torque-transfer random access memory array; Circuits; Design methodology; Energy dissipation; Magnetic analysis; Magnetic tunneling; Minimization methods; Random access memory; Silicon; Space exploration; Space technology; L2 caches; magnetic tunneling junction (MTJ); spin torque transfer RAM (STTRAM); tunneling magneto-resistance (TMR);
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2010.2041476
Filename
5419980
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