• DocumentCode
    1425900
  • Title

    A Scalable Design Methodology for Energy Minimization of STTRAM: A Circuit and Architecture Perspective

  • Author

    Chatterjee, Subho ; Rasquinha, Mitchelle ; Yalamanchili, Sudhakar ; Mukhopadhyay, Saibal

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    19
  • Issue
    5
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    809
  • Lastpage
    817
  • Abstract
    In this paper, we analyze the energy dissipation in spin-torque-transfer random access memory array (STTRAM). We present a methodology for exploring the design space to minimize the energy dissipation of the array while maintaining required read and write quality for a given magnetic tunnel junction technology. The proposed method shows the need for proper choice of the silicon transistor width and array operating voltage to minimize the energy dissipation of the STTRAM array. The write energy is found to be 10 × greater than read energy. Hence, read-write ratio becomes a crucial factor that determines energy for STTRAM last level caches (L2). An exploration is performed across several architectural benchmarks including shared and non-shared caches for detailed energy analysis.
  • Keywords
    SRAM chips; integrated circuit design; magnetic tunnelling; STTRAM; array operating voltage; energy analysis; energy dissipation analysis; energy minimization; level caches; scalable design methodology; silicon transistor width; spin-torque-transfer random access memory array; Circuits; Design methodology; Energy dissipation; Magnetic analysis; Magnetic tunneling; Minimization methods; Random access memory; Silicon; Space exploration; Space technology; L2 caches; magnetic tunneling junction (MTJ); spin torque transfer RAM (STTRAM); tunneling magneto-resistance (TMR);
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2010.2041476
  • Filename
    5419980