Study of Damage Engineering—Quantitative Scatter Defect Measurements of Ultralow Energy Implantation Doping Using the Continuous Anodic Oxidation Technique/Differential Hall Effect

Author

Qin, Shu ; McTeer, Allen ; Hu, Yongjun Jeff ; Prussin, Si ; Reyes, Jason

Author_Institution

Process R&D Dept., Micron Technol., Inc., Boise, ID, USA

Volume

40

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

877

Lastpage

882

Abstract

The continuous anodic oxidation technique/differential Hall effect technique is used to study damage engineering of ultralow energy doping. It has been found that the scattering defect concentrations of the beam-line (BL) implants strongly correlate to the implant ion specie atomic mass unit and energy. Plasma doping (PLAD) seems to show a different mechanism for scatter defects. PLAD processes can have an in situ B-deposited film during implant and have less direct ion bombardment on the Si surface. The low scattering defect concentrations of PLAD implants (B₂H₆ and BF₃) indicate that PLAD implants show an intrinsic advantage over BL counterparts in the current process regime.

Keywords

Hall effect; anodisation; ion implantation; plasma magnetohydrodynamics; beam-line implants; continuous anodic oxidation technique; damage engineering-quantitative scatter defect measurements; differential Hall effect; low scattering defect concentrations; plasma doping; ultralow energy implantation doping; Annealing; Doping; Hall effect; Implants; Scattering; Silicon; Surface treatment; Carrier distribution; continuous anodic oxidation technique/differential Hall effect (CAOT/DHE) method; mobility; plasma doping (PLAD); scatter defects; ultralow energy (ULE) implants;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2011.2180403

Filename

6134683