$\\hbox {ZrO}_{2}$ -Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

Author

Zuo, Qingyun ; Long, Shibing ; Yang, Shiqian ; Liu, Qi ; Shao, Lubing ; Wang, Qin ; Zhang, Sen ; Li, Yingtao ; Wang, Yan ; Liu, Ming

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

344

Lastpage

346

Abstract

A memory cell based on n⁺-Si/ZrO₂/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 10⁴. The memory devices show a large on/off ratio of about 10⁶ and narrow resistance distributions before and after programming. The different transport mechanisms of forward and reverse currents are studied, which are responsible for this reliable self-rectifying characteristic. The demonstrated memory cell with self-rectifying properties has potential application in high-density passive crossbar WORM memory.

Keywords

MIS devices; electrical resistivity; elemental semiconductors; platinum; random-access storage; rectification; silicon; zirconium compounds; LRS; Si-ZrO₂-Pt; WORM memory application; antifuse-type nonvolatile WORM memory devices; forward currents; low resistance state; memory cell; on-off ratio; rectification ratio; reverse currents; self-rectifying effect; transport mechanisms; write-once-read-many-times memory application; $hbox{ZrO}_{2}$; Antifuse memory; crossbar array; write-once-read-many-times (WORM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2039849

Filename

5419995