Switched Bias Differential MOSFET Dosimeter

Author

Garcia-Inza, M. ; Carbonetto, S. ; Lipovetzky, J. ; Carra, M.J. ; Sambuco Salomone, L. ; Redin, E.G. ; Faigon, A.

Author_Institution

Device Phys.-Microelectron. Lab., Univ. de Buenos Aires, Buenos Aires, Argentina

Volume

61

Issue

3

fYear

2014

fDate

Jun-14

Firstpage

1407

Lastpage

1413

Abstract

This paper presents a differential MOSFET sensor reading technique based on the bias controlled cycled measurement. The circuit was implemented, and tested with gamma radiation from a 60-cobalt source. Temperature rejection performance was assessed during the exposure in real-time measurements. The results show that in comparison with a single MOSFET dosimeter the thermal drift is 20 times smaller and the radiation sensitivity is approximately 10% higher. The switched biasing allows to extend the measurement range beyond MOSFET´s threshold voltage saturation.

Keywords

MOSFET; dosimeters; 60-cobalt source; MOSFET threshold voltage saturation; bias controlled cycled measurement; differential MOSFET sensor reading technique; gamma radiation; switched bias differential MOSFET dosimeter; temperature rejection performance; Logic gates; MOSFET; Sensitivity; Switches; Temperature measurement; Temperature sensors; Threshold voltage; MOS sensors; MOSFET dosimeter; radiation effects; solid-state detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2316337

Filename

6819076