Electromechanical Transconductance Properties of a GaN MEMS Resonator With Fully Integrated HEMT Transducers

Author

Faucher, Marc ; Cordier, Yvon ; Werquin, Matthieu ; Buchaillot, Lionel ; Gaquière, Christophe ; Théron, Didier

Author_Institution

IEMN, Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve-d´´Ascq, France

Volume

21

Issue

2

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

370

Lastpage

378

Abstract

We investigate the response of a GaN microelectromechanical resonator where the strain detection is performed by a resonant high-electron mobility transistor (R-HEMT). The R-HEMT gate located above the 2-DEG (two-dimensional electron gas) appears to enable a strong control of the electromechanical response with a gate voltage dependence close to a transconductance pattern. A quantitative approach based on the mobility of the carriers induced in the device by the piezoelectric response of the GaN buffer is proposed. These results show for the first time the electromechanical transconductance dependence versus external biasing and confirm that active piezoelectric transduction is governed by the AlGaN/GaN 2-DEG transport properties.

Keywords

high electron mobility transistors; micromechanical resonators; piezoelectric transducers; 2D electron gas; GaN; HEMT transducers; MEMS resonator; electromechanical response; electromechanical transconductance dependence; electromechanical transconductance property; gate voltage dependence; microelectromechanical resonator; piezoelectric response; resonant high electron mobility transistor; strain detection; transconductance pattern; Actuators; Gallium nitride; HEMTs; Logic gates; Optical resonators; Transconductance; Transducers; Active transducers; III-V MEMS; gallium nitride; high-electron mobility transistor; piezoelectric device; resonator; transconductance;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2011.2179010

Filename

6135767