DocumentCode
1427581
Title
Thermal coupling in integrated circuits: application to thermal testing
Author
Altet, Josep ; Rubio, Antonio ; Schaub, Emmanuel ; Dilhaire, Stefan ; Claeys, Wilfrid
Author_Institution
Dept. of Electron. Eng., Polytech. Univ. of Catalonia, Barcelona, Spain
Volume
36
Issue
1
fYear
2001
fDate
1/1/2001 12:00:00 AM
Firstpage
81
Lastpage
91
Abstract
The power dissipated by the devices of a circuit can be construed as a signature of the circuit´s performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented
Keywords
MOS integrated circuits; VLSI; integrated circuit testing; temperature sensors; thermoreflectance; VLSI MOS device; built-in differential temperature sensor; integrated circuit; laser thermoreflectance; on-chip measurement; power consumption; power dissipation; silicon die surface; thermal coupling; thermal testing; Application specific integrated circuits; Circuit optimization; Coupling circuits; Energy consumption; MOS devices; Silicon; Temperature measurement; Temperature sensors; Thermoreflectance; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.896232
Filename
896232
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