• DocumentCode
    1427781
  • Title

    High-efficiency light-emitting diodes at /spl ap/1.3 /spl mu/m using InAs-InGaAs quantum dots

  • Author

    Fiore, A. ; Oesterle, U. ; Stanley, R.P. ; Ilegems, M.

  • Author_Institution
    Inst. for Micro-Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland
  • Volume
    12
  • Issue
    12
  • fYear
    2000
  • Firstpage
    1601
  • Lastpage
    1603
  • Abstract
    Light-emitting diodes (LEDs) based on long-wavelength, self-assembled InAs-InGaAs quantum dots (QDs) are demonstrated and characterized. The LEDs consist of a single layer of QDs positioned at /spl lambda//2 from a top gold mirror to enhance the extraction efficiency. The external quantum efficiency at room temperature is 1%, which corresponds to an estimated 13% radiative efficiency. High-injection electroluminescence and photovoltage spectra under reverse bias allow us to determine the transition energies of excited states in the QDs and bidimensional states in the adjacent InGaAs quantum well.
  • Keywords
    III-V semiconductors; electroluminescence; excited states; gallium arsenide; indium compounds; light emitting diodes; mirrors; optical transmitters; quantum well devices; self-assembly; semiconductor heterojunctions; semiconductor quantum dots; spontaneous emission; 0.8 percent; 1 percent; 1.3 mum; 1.5 mW; 1285 nm; 13 percent; 298 K; Au; Au mirror; InAs-InGaAs; InAs-InGaAs quantum dots; InGaAs quantum well; LEDs; bidimensional states; excited states; external quantum efficiency; extraction efficiency; high-efficiency light-emitting diodes; high-injection electroluminescence; light-emitting diodes; long-wavelength self-assembled quantum dots; photovoltage spectra; radiative efficiency; reverse bias; room temperature; transition energies; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Mirrors; Quantum dot lasers; Quantum dots; Substrates; Surface emitting lasers; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.896320
  • Filename
    896320