• DocumentCode
    1427902
  • Title

    Techniques for the measurement of source and drain series resistance in m.o.s. transistors

  • Author

    Mellor, P.J.T.

  • Author_Institution
    General Post Office, Research Department, London, UK
  • Volume
    118
  • Issue
    10
  • fYear
    1971
  • fDate
    10/1/1971 12:00:00 AM
  • Firstpage
    1393
  • Lastpage
    1398
  • Abstract
    Three methods for measuring the source and drain resistance of m.o.s. transistors operating in the unsaturated region are described. The results obtained on a number of simple m.o.s. transistors are presented to illustrate and compare each method and to indicate the significance of such measurements.
  • Keywords
    field effect transistors; metal-insulator-semiconductor devices; resistance measurement; MOS; comparison; measurement methods; measurements; results; significance; source and drain resistance; techniques; transistors; unsaturated region;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineers, Proceedings of the Institution of
  • Publisher
    iet
  • ISSN
    0020-3270
  • Type

    jour

  • DOI
    10.1049/piee.1971.0261
  • Filename
    5250584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1427902