DocumentCode
1427984
Title
Measurement of anisotropic fatigue life in micrometre-scale single-crystal silicon specimens
Author
Ikehara, T. ; Tsuchiya, Takao
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Volume
5
Issue
1
fYear
2010
Firstpage
49
Lastpage
52
Abstract
The fatigue life of micrometre-scale single-crystal silicon specimens was measured using the resonant vibration of a micromachined resonator device. Two kinds of identically shaped specimens oriented to ??110?? and ??100?? crystal directions on the (001) plane were tested. On the deflection-life relationship, the deflection amplitudes of the ??100?? oriented specimens were approximately 1.56 times higher than that of ??110?? oriented ones at the same fatigue life. Observation by scanning electron microscope showed that the fracture surfaces differed depending on the specimen orientation and deflection amplitude. The life-shortening effect of the surface roughness was also demonstrated.
Keywords
elemental semiconductors; fatigue; mechanical variables measurement; micromechanical resonators; scanning electron microscopy; silicon; vibrations; (001) plane; ??100?? crystal direction; ??110?? crystal direction; Si; anisotropic fatigue life measurement; life-shortening effect; micromachined resonator device; micrometre-scale single-crystal silicon specimens; resonant vibration; scanning electron microscope; surface roughness;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2009.0073
Filename
5421869
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