A Two-Stage Charge Transfer Active Pixel CMOS Image Sensor With Low-Noise Global Shuttering and a Dual-Shuttering Mode

Author

Yasutomi, Keita ; Itoh, Shinya ; Kawahito, Shoji

Author_Institution

Grad. Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu, Japan

Volume

58

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

740

Lastpage

747

Abstract

A complementary metal-oxide-semiconductor (CMOS) image sensor with low-noise global shuttering and a dual-shuttering mode is presented. The developed two-stage charge transfer pixel enables noise canceling by means of true correlated double sampling. The implemented prototype demonstrates for the first time that a noise level of less than three electrons can be achieved in a global-shutter CMOS image sensor while attaining high shutter efficiency of 99.7%. In the dual-shuttering mode, both a pinned storage diode signal and a floating diffusion signal are used for desirable functions such as wide-dynamic-range imaging, motion detection, and dual consecutive snapshot imaging.

Keywords

CMOS image sensors; charge exchange; image sampling; interference suppression; CMOS image sensor; complementary metal oxide semiconductor; dual-shuttering mode; floating diffusion signal; global shuttering; kTC noise cancellation; sampling; two-stage charge transfer active pixel; Complementary metal–oxide–semiconductor (CMOS) image sensor; dual shutter; global shutter; low noise; motion detection; two-stage charge transfer; wide dynamic range;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2095856

Filename

5688448