• DocumentCode
    1429342
  • Title

    Pulse-Width Modulated CMOS Power Amplifiers

  • Author

    Walling, Jeffrey S. ; Allstot, David J.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Washington, WA, USA
  • Volume
    12
  • Issue
    1
  • fYear
    2011
  • Firstpage
    52
  • Lastpage
    60
  • Abstract
    The relentless scaling of CMOS circuits has led to the possibility of completely integrated RF-SOCs, including the PA. A CMOS PA likely will not achieve the same peak output power and efficiency as its counterpart in a III-V technology. It is conceivable, however, that by taking advantage of the strengths of CMOS switching devices, future CMOS PAs can win in terms of average efficiency and, perhaps more importantly, cost. PWM techniques offer one such potential solution, owing to the level of digital integration possible. Because of this, PWM PAs are expected to scale well, and the dynamic range possible with such amplifiers should increase as well because the faster devices will be able to process signals with smaller pulse widths.
  • Keywords
    CMOS integrated circuits; power amplifiers; pulse width modulation; radiofrequency integrated circuits; system-on-chip; CMOS power amplifiers; CMOS switching devices; pulse width modulation; radiofrequency system-on-chip; CMOS integrated circuits; Frequency modulation; Power amplifiers; Power generation; Pulse width modulation; Switches;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2010.939304
  • Filename
    5691130