DocumentCode
1429517
Title
High-speed monolithic GaInAs pinFET
Author
Miura, Shun ; Mikawa, T. ; Fujii, Teruya ; Wada, O.
Author_Institution
Fujitsu Labs. Ltd., Atsugi
Volume
24
Issue
7
fYear
1988
fDate
3/31/1988 12:00:00 AM
Firstpage
394
Lastpage
395
Abstract
A monolithic planar structure pin photodiode/field-effect transistor (pinFET) consisting of a low capacitance InP/GaInAs embedded pin photodiode and an AlInAs/GaInAs FET has been developed for long wavelength optical communications. Very high bitrate response capability of over 8 Gbit/s and good receiver performance at 2 Gbit/s have both been demonstrated
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical communication equipment; photodetectors; photodiodes; 2 Gbit/s; 8 Gbit/s; AlInAs-GaInAs transistor; InP-GaInAs photodiode; high bitrate; long wavelength optical communications; monolithic GaInAs pinFET; monolithic planar structure; pin photodiode/field-effect transistor; receiver performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5692
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