Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride

Author

Kuo, Chia-Hao ; Lin, Horng-Chih ; Huang, Tiao-Yuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

390

Lastpage

392

Abstract

In this letter, we fabricated and characterized thin-film transistors with a suspended poly-Si nanowire (NW) channel and gate nitride with embedded silicon nanocrystals (Si NCs). The embedded Si NCs increase the surface roughness, thus reducing the adhesive force as the nitride is in contact with the poly-Si NW channel during the operation. Such a feature results in a reduction in pull-in voltage and sharper pull-out behavior. Moreover, this approach also greatly improves the endurance characteristics of the devices.

Keywords

adhesives; elemental semiconductors; nanostructured materials; nanowires; silicon; thin film transistors; NW channel; Si; adhesive force; embedding nanocrystals; gate nitride; performance enhancement; surface roughness; suspended poly-Si nanowire channels; thin-film transistors; Force; Logic gates; Nanoscale devices; Rough surfaces; Silicon; Silicon compounds; Surface roughness; Adhesive force; nanocrystal (NC); nanowire (NW); poly-Si;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2179515

Filename

6138279