Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs

Author

Murti, M.R. ; Laskar, J. ; Nuttinck, S. ; Yoo, S. ; Raghavan, A. ; Bergman, J.I. ; Bautista, J. ; Lai, R. ; Grundbacher, R. ; Barsky, M. ; Chin, P. ; Liu, P.H.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

48

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2579

Lastpage

2587

Abstract

In this paper, we present detailed on-wafer S-parameter and noise parameter measurements and modeling of ZnP/InAlAs/InGaAs high electron mobility transistors (0.1-μm gate length) at cryogenic temperatures. Various physical effects influencing small-signal parameters, especially the radio-frequency (RF) transconductance and RF output resistance and their temperature dependence, are discussed in detail. Accurate on-wafer noise parameter measurements are carried out from 300 to 18 K, and the variation of the equivalent noise temperatures of drain and source (T _d and T_g) are modeled against temperature. Based on these models, a cryogenic low-noise amplifier in the Kα-band is developed with a record low noise temperature of 10 K

Keywords

III-V semiconductors; S-parameters; characteristics measurement; electric noise measurement; gallium arsenide; high electron mobility transistors; indium compounds; low-temperature techniques; microwave integrated circuits; microwave power amplifiers; semiconductor device models; semiconductor device noise; zinc compounds; 0.1 mum; 10 K; 300 to 18 K; InP HEMT; Kα-band; RF output resistance; RF transconductance; S-parameter measurement; ZnP-InAlAs-InGaAs; ZnP/InAlAs/InGaAs high electron mobility transistors; cryogenic low-noise amplifier; cryogenic temperature; equivalent noise temperature; low noise temperature; noise parameter measurement; small-signal parameters; Cryogenics; Electrical resistance measurement; HEMTs; Indium compounds; Indium gallium arsenide; Length measurement; Noise measurement; Radio frequency; Scattering parameters; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.899016

Filename

899016