Low-Pass and Bandpass Alternative Ultraviolet Photoconductor Based on Zinc Oxide Nanoparticles on Intrinsic Gallium Nitride-Based Substrate

Author

Qin, Liqiao ; Shing, Christopher ; Sawyer, Shayla

Author_Institution

Electr., Comput., & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

23

Issue

7

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

414

Lastpage

416

Abstract

Zinc oxide (ZnO) nanoparticles created by top-down wet-chemistry synthesis were deposited onto intrinsic epitaxial grown gallium nitride-based substrates. Aluminum (Al) was evaporated through a shadow mask to form photoconductors. Visible-blind ultraviolet (UV) response has been recorded as high as 0.8 A/W at 375 nm. Experiments demonstrated that the photoconductors exhibited either a low-pass or bandpass spectral response depending on the illumination directions.

Keywords

II-VI semiconductors; integrated optoelectronics; nanoparticles; nanophotonics; photoconducting devices; photodetectors; semiconductor devices; ultraviolet detectors; wide band gap semiconductors; zinc compounds; GaN; ZnO; bandpass alternative ultraviolet photoconductor; evaporation; intrinsic gallium nitride-based substrate; low-pass alternative ultraviolet photoconductor; top-down wet-chemistry synthesis; visible-blind ultraviolet response; wavelength 375 nm; zinc oxide nanoparticles; Polyvinyl-alcohol (PVA) coated ZnO nanoparticles; spectrally selective response; top-down wet-chemical etching; ultraviolet (UV) photoconductor;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2107508

Filename

5696738