Intensity noise and polarization stability of GaAlAs-GaAs surface emitting lasers

Author

Koyama, Fumio ; Morito, Ken ; Iga, Kenichi

Author_Institution

Tokyo Inst. of Technol., Yokohama, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1410

Lastpage

1416

Abstract

The intensity noise characteristics of GaAlAs-GaAs vertical cavity surface emitting (SE) lasers have been investigated. A low-intensity noise of -145 dB/Hz was obtained with an output power of 2.2 mW. The spontaneous emission factor is estimated to be 2×10^-5, both from the bias dependence of the intensity noise and from the relative mode intensity below threshold. This is in good agreement with theoretical expectation. The possibility of low-noise operation of a microcavity SE laser with an extremely low output power of less than ~100 μW is shown. The polarization stability of the surface emitting laser is demonstrated by measuring the intensity fluctuations of an individual polarization state

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; laser cavity resonators; light polarisation; semiconductor junction lasers; 100 muW; 2.2 muW; GaAlAs-GaAs vertical cavity surface emitting lasers; III-V semiconductors; bias dependence; individual polarization state; intensity fluctuations; intensity noise characteristics; microcavity SE laser; output power; polarization stability; relative mode intensity; spontaneous emission factor; Laser modes; Laser noise; Laser stability; Laser theory; Microcavities; Polarization; Power generation; Spontaneous emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89958

Filename

89958