Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells

Author

Chang, Cheng-Yu ; Wu, Yuh-Renn

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

884

Lastpage

889

Abstract

Recently, InGaN/GaN quantum wells with different nanostructures such as nanoholes and nanorods have been proposed to enhance the light emitting efficiency. This paper calculates the influence of nanostructures to the strain and band profile of the quantum well. The effects of strain relaxation and surface states are analyzed, which could possibly influence the diode emission properties. Our calculation results show that the strain relaxation and the surface state pinning play important roles in enhancing the light emission, reducing the quantum confined Stark effect, and causing the blue shift of the spectrum. Our calculation results provide useful information in analyzing emission properties of nanohole arrays and similar structures.

Keywords

III-V semiconductors; Stark effect; gallium compounds; indium compounds; light propagation; nanostructured materials; semiconductor quantum wells; wide band gap semiconductors; diode emission properties; light emission enhancement; nanoholes; nanorods; nanostructured quantum wells; quantum confined Stark effect; strain relaxation; surface state pinning; surface states; Capacitive sensors; Gallium nitride; Light emitting diodes; Nanoscale devices; Nanostructures; Optical design; Photonic crystals; Potential well; Radiative recombination; Semiconductor diodes; GaN; InGaN; nanohole; quantum well; strain relaxation; surface state; valence force field model;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2040515

Filename

5424134