Design and photoluminescence study on a multiquantum barrier

Author

Takagi, Takeshi ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1511

Lastpage

1519

Abstract

The structure of a multiquantum barrier (MQB) is discussed, and possible choices of well and barrier thickness and pair number for a visible AlGaInP laser in the 630 nm wavelength range are examined. Is it confirmed that an effective potential barrier can be two times as high as a classical potential barrier. The potential barrier height under biased conditions is shown to be larger than 50 meV, considering the variation of Fermi level changes in the MQB region. This may contribute to higher temperature CW operation when introduced into visible AlGaInP lasers. By photoluminescence (PL) measurement, the effect of electron-wave confinement of a GaAs/AlGaAs MQB is experimentally verified. A weak saturation in PL excitation power dependence and less sensitive temperature dependence were observed. These effects could be due to the increase in potential barrier height, and show a superior carrier confinement of MQB

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor junction lasers; semiconductor quantum wells; 630 nm; Fermi level changes; GaAs-AlGaAs; GaAs/AlGaAs MQB; III-V semiconductor; MQB; barrier thickness; biased conditions; carrier confinement; classical potential barrier; design; effective potential barrier; electron-wave confinement; excitation power dependence; higher temperature CW operation; multiquantum barrier; pair number; photoluminescence study; temperature dependence; visible AlGaInP laser; weak saturation; well thickness; Carrier confinement; Chemicals; Helium; Heterojunctions; Laser excitation; Metallic superlattices; Molecular beam epitaxial growth; Photoluminescence; Temperature dependence; Temperature sensors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89971

Filename

89971