Linewidth broadening of SCH quantum-well lasers enhanced by carrier fluctuation in optical guiding layers

Author

Yamada, Minoru ; Haraguchi, Yoshinori

Author_Institution

Dept. of Electr. & Comput. Eng., Kanazawa Univ., Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1676

Lastpage

1681

Abstract

A theoretical analysis of the spectral linewidth in separate-confinement heterostructure (SCH) quantum-well (QW) semiconductor lasers is given by taking into account the dynamics of the injected carriers in the optical guiding and barrier layers. The analytical result indicates that the linewidth tends to be abruptly broadened due to the dynamics of the carriers overflowing into the optical guiding layers, typically in a single-quantum-well structure. In addition, a superior effect on the linewidth reduction is predicted by adoption of a potential controlled (or modulation-doped) structure

Keywords

semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; barrier layers; carrier fluctuation; injected carriers; linewidth broadening; linewidth reduction; modulation doped structure; optical guiding layers; potential controlled structure; semiconductor lasers; separate confinement heterostructure quantum well lasers; spectral linewidth; theoretical analysis; Fluctuations; Laser theory; Nonlinear optics; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor lasers; Spontaneous emission; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89992

Filename

89992