Fully Integrated 39 dBm, 3-Stage Doherty PA MMIC in a Low-Voltage GaAs HBT Technology

Author

Karthaus, Udo ; Sukumaran, Deepti ; Tontisirin, Sitt ; Ahles, Stephan ; Elmaghraby, Ahmed ; Schmidt, Lothar ; Wagner, Horst

Author_Institution

Ubidyne GmbH, Ulm, Germany

Volume

22

Issue

2

fYear

2012

Firstpage

94

Lastpage

96

Abstract

A power amplifier, designed and fabricated in a low voltage GaAs hetero-junction bipolar transistor technology with a Doherty output stage, is presented. A pre-driver, a driver, main and peaking amplifiers, bias circuits, a 90^° power splitter, and the Doherty impedance transformer are integrated on a single chip. Measured key performance parameters include a P1dB compression point of at least 38.8 dBm over the US digital dividend band ranging from 728 to 768 MHz, and a PAE of 37% for a 5 MHz long term evolution downlink signal with 7.16 dB peak-to-average ratio.

Keywords

III-V semiconductors; MMIC amplifiers; active antennas; driver circuits; heterojunction bipolar transistors; low-power electronics; power amplifiers; Doherty PA MMIC; Doherty impedance transformer; Doherty output stage; GaAs; HBT technology; active antenna system; bias circuit; frequency 5 MHz; frequency 728 MHz to 768 MHz; hetero-junction bipolar transistor technology; peaking amplifier; power amplifier; power splitter; predriver; Antennas; Base stations; Gain; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Telephone sets; Active antenna system (AAS); Doherty power amplifier; GaAs; hetero-junction bipolar transistor (HBT); long term evolution (LTE); power amplifier (PA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2181829

Filename

6140598