Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes

Author

Onishi, Toshikazu ; Adachi, Hideto ; Kidoguchi, Isao ; Mkannoh, M. ; Takamori, Akira ; Narukawa, Yukio ; Kawakami, Yoichi ; Fujita, Shigeo

Author_Institution

Discrete Device Div., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan

Volume

10

Issue

10

fYear

1998

Firstpage

1368

Lastpage

1370

Abstract

On AlGaInP laser diodes, the doping level and type of GaInP saturable absorbing (SA) layers suitable for self sustained pulsation are clarified. Optical properties of n- and p-type GaInP quantum wells (QWs) have been evaluated by means of time-resolved photoluminescence (TRPL) spectroscopy. As the doping level becomes higher, the recombination lifetime becomes shorter, and it can be reduced to 1.1 ns at our highest doping level (1=2/spl times/10/sup 18/ cm/sup -3/). For highly doped n-type QW, a PL peak energy shift as large as 26 meV is observed by high-density excitation. Highly doped p-type SA layer is suitable for self-sustained pulsating laser diodes, because it offers short recombination lifetime and no Burstein shift under highly excited condition.

Keywords

III-V semiconductors; aluminium compounds; excited states; gallium compounds; indium compounds; laser transitions; optical saturable absorption; photoluminescence; quantum well lasers; semiconductor doping; time resolved spectroscopy; 1.1 ns; 26 meV; 650 nm; AlGaInP; GaInP; GaInP quantum wells; GalnP saturable absorbing layers; PL peak energy shift; doping level; high-density excitation; highly doped n-type QW; highly excited condition; pulsed AIGaInP laser diodes; recombination lifetime; self sustained pulsation; short recombination lifetime; time-resolved photoluminescence spectroscopy; Diode lasers; Doping; Epitaxial growth; Laser excitation; Optical feedback; Optical noise; Photoluminescence; Radiative recombination; Spectroscopy; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.720263

Filename

720263