21 dB gain 87 GHz low-noise amplifier using 0.18μm SiGe BiCMOS

Author

Chen, A.Y.-K. ; Baeyens, Y. ; Chen, Yen-Kuang ; Lin, James

Author_Institution

Bell Labs., Alcatel-Lucent, Murray Hill, NJ, USA

Volume

46

Issue

5

fYear

2010

Firstpage

332

Lastpage

333

Abstract

The performance of a single-ended two-stage high gain low-noise amplifier (LNA) fabricated in a low-cost 200 GHz f_T and f_max 0.18 μm SiGe BiCMOS technology is presented. The LNA shows a maximum power gain of 21 dB at 87 GHz with a 3 dB bandwidth from 81 to 92.6 GHz. The measured noise figure is 9.1 dB at 87 GHz and is in the range 8-10 dB from 80 to 93 GHz. The reverse isolation is better than 45 dB over a 3 dB bandwidth. The measured input and output return losses are 17.3 and 11.7 dB at 87 GHz, respectively. The measured input-referred 1 dB compression point (input PidB) of the amplifier is -18.8 dBm at 87 GHz. The chip area including the pads is 635 x 625 μm. The LNA draws a total current of 15.2 mA from a 3.3 V supply.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; low noise amplifiers; millimetre wave amplifiers; semiconductor materials; LNA; SiGe; SiGe BiCMOS technology; bandwidth 80 GHz to 93 GHz; bandwidth 81 GHz to 92.6 GHz; current 15.2 mA; frequency 200 GHz; gain 21 dB; loss 11.7 dB; loss 17.3 dB; noise figure 8 dB to 10 dB; return losses; single-ended two-stage high gain low-noise amplifier; size 0.18 mum; voltage 3.3 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2010.0155

Filename

5426967