DocumentCode
1437500
Title
Delay Analysis of Graphene Field-Effect Transistors
Author
Wang, Han ; Hsu, Allen ; Lee, Dong Seup ; Kim, Ki Kang ; Kong, Jing ; Palacios, Tomas
Author_Institution
Microsyst. Technol. Lab., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume
33
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
324
Lastpage
326
Abstract
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.
Keywords
delays; field effect transistors; graphene; C; RF GFET structure optimization; carrier transit delay analysis; carrier velocity estimation; delay breakdown; extrinsic component; graphene field-effect transistors; intrinsic component; intrinsic delay extraction; parasitic components; Capacitance; Delay; Logic gates; Radio frequency; Substrates; Transistors; Carrier velocity; chemical vapor deposition graphene; delay analysis; graphene FET (GFET); sapphire;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2180886
Filename
6144692
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