• DocumentCode
    1437729
  • Title

    A New Stress Migration Failure Mode in Highly Scaled Cu/Low- k Interconnects

  • Author

    Lee, Chang-Chun ; Oates, Anthony S.

  • Author_Institution
    Dept. of Mech. Eng., Chung Yuan Christian Univ., Chungli, Taiwan
  • Volume
    12
  • Issue
    2
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    529
  • Lastpage
    531
  • Abstract
    We identify a new stress migration (SM) failure mode in Cu/low-k interconnects whereby voids are formed in very narrow trenches close to large Cu plates. Finite-element analysis shows that the new failure mode is generated by large stress gradients associated with geometry changes in highly scaled Cu interconnects. This work indicates that management of mechanical stresses will be an important issue for future development of reliable Cu/low- k interconnects.
  • Keywords
    finite element analysis; gradient methods; integrated circuit interconnections; integrated circuit reliability; finite-element analysis; highly scaled copper-low-k interconnects; mechanical stress management; stress gradients; stress migration failure mode; Copper; Kelvin; Materials; Periodic structures; Reliability; Resistance; Stress; Cu; interconnect; low-$k$ ; reliability; stress migration (SM); stress-voiding;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2012.2185497
  • Filename
    6144722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1437729