Modeling of optoelectronic switch with PIN photodiode and GaAs MESFET transmission gate

Author

Liu, Qing Z. ; MacDonald, R. Ian

Author_Institution

Telecommun. Res. Lab., Edmonton, Alta., Canada

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1833

Lastpage

1837

Abstract

A broadband and high-isolation optoelectronic switch, which consists of a PIN photodiode and a GaAs MESFET in common gate configuration as a transmission gate, was theoretically and experimentally investigated. An analytical model has been developed to calculate the isolation level of the switch. The influences on the isolation level from different device parameters were studied. Experimental results obtained using commercial components validate the operation of the proposed switch. Measured isolation of 70 dB at 300 kHz and 55 dB up to 1.0 GHz were achieved. Good agreement has been obtained between the measured and calculated results and therefore the model developed has been validated

Keywords

Schottky gate field effect transistors; equivalent circuits; field effect transistor switches; gallium arsenide; p-i-n photodiodes; photoconducting switches; semiconductor device models; 300 kHz to 1 GHz; GaAs; GaAs MESFET transmission gate; PIN photodiode; analytical model; broadband switch; common gate configuration; equivalent circuit; isolation level; optoelectronic switch modeling; Detectors; Gallium arsenide; Impedance; MESFETs; Optical crosstalk; Optical filters; Optical switches; PIN photodiodes; Switching circuits; Telecommunication switching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543015

Filename

543015