DocumentCode
1438369
Title
A single-transistor silicon synapse
Author
Diorio, Chris ; Hasler, Paul ; Minch, Bradley A. ; Mead, Carver A.
Author_Institution
Lab. of Phys. & Comput., California Inst. of Technol., Pasadena, CA, USA
Volume
43
Issue
11
fYear
1996
fDate
11/1/1996 12:00:00 AM
Firstpage
1972
Lastpage
1980
Abstract
We have developed a new floating-gate silicon MOS transistor for analog learning applications. The memory storage is nonvolatile; hot-electron injection and electron tunneling permit bidirectional memory updates. Because these updates depend on both the stored memory value and the transistor terminal voltages, the synapse can implement a learning function. We have derived a memory-update rule from the physics of the tunneling and injection processes, and have investigated synapse learning in a prototype array. Unlike conventional EEPROM devices, the synapse allows simultaneous memory reading and writing. Synapse transistor arrays can therefore compute both the array output, and local memory updates, in parallel. The synapse is small, and typically is operated at subthreshold current levels; it will permit the development of dense, low-power silicon learning systems
Keywords
MOSFET; analogue storage; arrays; hot carriers; learning (artificial intelligence); tunnel transistors; 2D synaptic array; Fowler-Nordheim tunneling; LDD MOSFET; analog learning applications; bidirectional memory updates; dense low-power silicon learning systems; electron tunneling; floating-gate Si MOS transistor; hot-electron injection; memory-update rule; nonvolatile memory storage; simultaneous memory reading/writing; single-transistor silicon synapse; stored memory value; subthreshold current levels; synapse learning; synapse transistor arrays; transistor terminal voltages; EPROM; MOSFETs; Nonvolatile memory; Physics; Prototypes; Read-write memory; Secondary generated hot electron injection; Silicon; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.543035
Filename
543035
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