• DocumentCode
    1438369
  • Title

    A single-transistor silicon synapse

  • Author

    Diorio, Chris ; Hasler, Paul ; Minch, Bradley A. ; Mead, Carver A.

  • Author_Institution
    Lab. of Phys. & Comput., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    43
  • Issue
    11
  • fYear
    1996
  • fDate
    11/1/1996 12:00:00 AM
  • Firstpage
    1972
  • Lastpage
    1980
  • Abstract
    We have developed a new floating-gate silicon MOS transistor for analog learning applications. The memory storage is nonvolatile; hot-electron injection and electron tunneling permit bidirectional memory updates. Because these updates depend on both the stored memory value and the transistor terminal voltages, the synapse can implement a learning function. We have derived a memory-update rule from the physics of the tunneling and injection processes, and have investigated synapse learning in a prototype array. Unlike conventional EEPROM devices, the synapse allows simultaneous memory reading and writing. Synapse transistor arrays can therefore compute both the array output, and local memory updates, in parallel. The synapse is small, and typically is operated at subthreshold current levels; it will permit the development of dense, low-power silicon learning systems
  • Keywords
    MOSFET; analogue storage; arrays; hot carriers; learning (artificial intelligence); tunnel transistors; 2D synaptic array; Fowler-Nordheim tunneling; LDD MOSFET; analog learning applications; bidirectional memory updates; dense low-power silicon learning systems; electron tunneling; floating-gate Si MOS transistor; hot-electron injection; memory-update rule; nonvolatile memory storage; simultaneous memory reading/writing; single-transistor silicon synapse; stored memory value; subthreshold current levels; synapse learning; synapse transistor arrays; transistor terminal voltages; EPROM; MOSFETs; Nonvolatile memory; Physics; Prototypes; Read-write memory; Secondary generated hot electron injection; Silicon; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.543035
  • Filename
    543035