Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Author

Danneville, François ; Dambrine, Gilles ; Cappy, Alain

Author_Institution

Inst. d´´Electr. et de Microelectron. du Nord, CNRS, Villeneuve d´´Ascq, France

Volume

45

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

2207

Lastpage

2212

Abstract

The aim of this paper is to present a noise model which predicts the noise performance of MESFET and HEMT mixers. The conversion and noise correlation matrices of a FET mixer are calculated using a uniform nonlinear noisy active line concept to describe the FET. This calculation is based on a perturbation analysis of the large-signal noiseless steady state, making it a “microscopic nonlinear noise model”. This method is applied to the case of a hot HEMT gate mixer and we show that the theoretical results are in agreement with experimental data

Keywords

HEMT circuits; MESFET circuits; Schottky gate field effect transistors; circuit noise; equivalent circuits; high electron mobility transistors; matrix algebra; mixers (circuits); semiconductor device models; FET mixer; HEMT mixers; MESFET mixers; conversion matrix; hot HEMT gate mixer; large-signal noiseless steady state; noise correlation matrix; noise modeling; perturbation analysis; uniform noisy line model; uniform nonlinear noisy active line; Active noise reduction; Circuit noise; Frequency; HEMTs; Impedance; MESFETs; Microwave FETs; Mixers; Predictive models; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.725255

Filename

725255