DocumentCode
1438784
Title
Tunnelling transport in Al-n-GaSb Schottky diodes
Author
Subekti, A. ; Tansley, T.L. ; Goldys, E.M.
Author_Institution
Lab. of Semicond. Sci. & Technol., Macquarie Univ., Sydney, NSW, Australia
Volume
45
Issue
10
fYear
1998
fDate
10/1/1998 12:00:00 AM
Firstpage
2247
Lastpage
2248
Abstract
Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K, are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal, accentuated by annealing, suggesting modification of the reactive GaSb surface
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; gallium compounds; semiconductor-metal boundaries; tunnelling; 0.6 eV; 10 to 300 K; Al Schottky contacts; Al-GaSb; Al/n-GaSb Schottky diodes; barrier heights; donor concentrations; electron tunneling; forward bias ideality factors; n-type GaSb; reactive GaSb surface modification; tunnelling transport; Annealing; Atmosphere; Fabrication; Metallization; Nitrogen; Ohmic contacts; Schottky barriers; Schottky diodes; Semiconductor diodes; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.725261
Filename
725261
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