InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications

Author

Betser, Yoram ; Scott, Dennis ; Mensa, Dino ; Jaganathan, Shri ; Mathew, Thomas ; Rodwell, Mark J.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

22

Issue

2

fYear

2001

Firstpage

56

Lastpage

58

Abstract

We report the design, fabrication, and measurement of InAlAs/InGaAs heterostructure bipolar transistors (HBTs) designed for high speed digital circuits. At 0.96 V V/sub CE/ the current gain cutoff frequency, f/sub /spl tau//, is 300 GHz and the maximum frequency of oscillation, f/sub max/, is 235 GHz. This value of f/sub /spl tau//, is the highest reported for bipolar transistors. At a slightly higher V/sub CE/ bias, a high value of 295 GHz for f/sub /spl tau// and f/sub max/ were obtained simultaneously.

Keywords

III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; 0.96 V; 235 GHz; 300 GHz; HBTs; InAlAs-InGaAs; current gain cutoff frequency; fabrication; heterostructure bipolar transistors; maximum frequency of oscillation; mixed analog/digital applications; semiconductor device measurement; Bipolar transistors; Capacitance; Current density; Cutoff frequency; Delay; Digital circuits; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.902830

Filename

902830