• DocumentCode
    1439076
  • Title

    1/f noise in advanced CMOS transistors

  • Author

    Nemirovsky, Yael ; Corcos, Dan ; Brouk, Igor ; Nemirovsky, Amikam ; Chaudhry, Samir

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Institute of Technology, Haifa, Israel
  • Volume
    14
  • Issue
    1
  • fYear
    2011
  • Firstpage
    14
  • Lastpage
    22
  • Abstract
    This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of 1/f noise, models of 1/f noise, and ways of measuring 1/f noise are briefly reviewed.
  • Keywords
    1/f noise; MOSFET; noise measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; 1/f noise model; CMOS transistor; MOSFET; channel length; noise measurement; 1f noise; CMOS technology; Noise measurement; Transistors;
  • fLanguage
    English
  • Journal_Title
    Instrumentation & Measurement Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1094-6969
  • Type

    jour

  • DOI
    10.1109/MIM.2011.5704805
  • Filename
    5704805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1439076