• DocumentCode
    1439603
  • Title

    A Sensing Noise Compensation Bit Line Sense Amplifier for Low Voltage Applications

  • Author

    Lee, Myoung Jin

  • Author_Institution
    R& D Div., Hynix Semicond. Inc., Icheon, South Korea
  • Volume
    46
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    690
  • Lastpage
    694
  • Abstract
    A new bit-line sense amplifier for improving performance in the presence of data-pattern-dependent sensing noise is analyzed. The proposed scheme utilizes the power drop phenomenon in the sense amplifier driving line, resulting in an 81.5% reduction in the amplitude of data-pattern-dependent sensing noise. It is very important to accurately model power drop in compensating data-pattern-dependent sensing noise. Simulation and measurement of the proposed sensing scheme show improvement of sensing noise over a conventional bit-line sense amplifier. Moreover, the type of sense amplifier driver circuit significantly affects the magnitude of the improvement. The impact of the sense amplifier driver layout is analyzed in order to better utilize the proposed scheme. Finally, an optimum data pattern noise insensitive sense amplifier and driver are proposed.
  • Keywords
    DRAM chips; amplifiers; low-power electronics; data-pattern-dependent sensing noise; low voltage applications; sensing noise compensation bit line sense amplifier; Arrays; Driver circuits; Noise; Random access memory; Resistance; Sensors; Solids; bit-line sense amplifier (BLSA); cell array; coupling effect; data pattern; dynamic random access memory (DRAM); offset; sensing noise;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2010.2102570
  • Filename
    5705519