Intensity modulated photoeffects in InP-MIS capacitors

Author

Madheswaran, M. ; Chakrabarti, P.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

143

Issue

4

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

248

Lastpage

251

Abstract

The effect of intensity modulated optical illumination on the characteristics of an InP-MIS capacitor has been examined theoretically in the paper. On the basis of the model developed, it has been found that the capacitance of the MIS capacitor can be controlled by an intensity modulated optical signal. The capacitance of the device under strong inversion depends on the optical power as well as the modulation frequency. This optically controlled capacitor can be used in the tank circuit of an oscillator for converting an intensity modulated optical signal into a corresponding frequency modulated electrical signal. Due to a low value of mean lifetime of the carriers, the device can be used over a wider range of frequency compared to conventional silicon MOS capacitors

Keywords

III-V semiconductors; MIS capacitors; carrier lifetime; electro-optical modulation; indium compounds; photocapacitance; CCD image sensor capacitors; InP; InP-MIS capacitors; capacitance; carrier lifetime; frequency modulated electrical signal; intensity modulated optical illumination; intensity modulated optical signal; intensity modulated photoeffects; mean lifetime; modulation frequency; optical power; optically controlled capacitor; oscillator; strong inversion; tank circuit;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19960389

Filename

543059