DocumentCode
1440474
Title
Switch-off behavior of floating-body PD SOI MOSFET´s
Author
Perron, L.M. ; Hamaguchi, C. ; Lacaita, A.L. ; Maegawa, S. ; Yamaguchi, Y.
Author_Institution
Dept. of Electron. Eng., Osaka Univ., Japan
Volume
45
Issue
11
fYear
1998
fDate
11/1/1998 12:00:00 AM
Firstpage
2372
Lastpage
2375
Abstract
In this work, we report a detailed study of the switch-off transients of the drain current in floating-body partially depleted (PD) SOI MOSFETs. When operated in the kink region and at frequency in the MHz range, floating body effects improve the current capability of these devices. However, we point out a serious drawback, that has been previously overlooked: the same effects lead to orders of magnitude increase of the off-state leakage current calling for a trade-off between speed and power dissipation
Keywords
MOSFET; leakage currents; silicon-on-insulator; switching; transient analysis; MHz frequency range; Si; device speed; drain current; floating-body PD SOI MOSFET; kink region; offstate leakage current; partially depleted SOI MOSFET; power dissipation; switch-off behavior; switch-off transients; Capacitance; Circuit synthesis; Impact ionization; Leakage current; MOSFET circuits; Power dissipation; Steady-state; Switching frequency; Tellurium; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.726660
Filename
726660
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