Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures

We use wafer fusion to integrate AlGaInAs quantum-well (QW) laser heterostructures to GaN laser diode and light-emitting diode (LED) structures. After fusion of the laser heterostructure to the GaN layers, AlGaInAs QW lasers are fabricated and characterized. Lasers of 15×510 μm operate with a threshold of 20 mA and external differential quantum efficiency of 15.5%/facet at a wavelength of 820 nm, InGaN-GaN LED´s, fabricated 75 μm from the lasers, emit at 458 nm. The operation of the lasers and LED´s fused to GaN demonstrates that the fused interface is mechanically robust, and the properties of fused heterostructures are not adversely affected by the fusion process.