Switching operation in intersectional type field effect MQW optical switch

Author

Ravikumar, K.G. ; Shimomura, K. ; Kikugawa, T. ; Izumi, A. ; Arai, S. ; Suematsu, Y. ; Matsubara, K.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

24

Issue

7

fYear

1988

fDate

3/31/1988 12:00:00 AM

Firstpage

415

Lastpage

416

Abstract

Switching operation in an intersectional-type field effect multiquantum-well optical switch was observed for the first time from light reflection caused by the electric-field-induced refractive index variation and absorption coefficient change. The authors report switching operation in a GaInAsP/InP MQW ridge waveguide structure with an intersection angle of 4°. Polarisation dependent properties originating from the quantum-well structure were also observed

Keywords

III-V semiconductors; electro-optical devices; field effect devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical waveguides; refractive index; switching; GaInAsP-InP; III-V semiconductors; MQW optical switch; absorption coefficient change; electric-field-induced refractive index variation; electro-optical devices; field effect; intersectional type; light reflection; multiquantum-well; polarisation dependent properties; quantum-well structure; ridge waveguide structure; switching operation; ultra high speed switches;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

5706