• DocumentCode
    1440973
  • Title

    Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation

  • Author

    Schweiger, K. ; Hofbauer, Michael ; Dietrich, H. ; Zimmermann, Horst ; Voss, K.O. ; Merk, B.

  • Author_Institution
    Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
  • Volume
    48
  • Issue
    3
  • fYear
    2012
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    A CMOS inverter in 90 nm CMOS bulk technology was exposed to heavy ion radiation (Au-197) at a micro-beam facility. The targeted inverter occupies an area of 6 3 m2. The resulting single event transient (SET) voltage pulses at the output were measured using an on-chip analogue sense amplifier. The output of the amplifier was recorded with a 15 GHz real-time oscilloscope. Depending on the location of the ion hits strongly different pulse shapes were observed.
  • Keywords
    CMOS logic circuits; amplifiers; analogue circuits; ion beam effects; logic gates; CMOS bulk technology; CMOS inverter; frequency 15 GHz; heavy ion irradiation; micro-beam facility; on-chip analogue sense amplifier; position dependent measurement; real-time oscilloscope; single event transient voltage pulse shape; size 90 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3767
  • Filename
    6145828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1440973