An improved Mo/n-GaAs contact by interposition of a thin Pd layer

Author

Nee, C.Y. ; Chang, Chun-Yen ; Cheng, T.F. ; Huang, T.S.

Author_Institution

Inst. of Electr. & Comput. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

315

Lastpage

316

Abstract

The idea of limited reaction has been used to solve the adhesion and stability problems of Mo/n-GaAs and Pd/n-GaAs contacts. The structural and electrical properties of Mo/Pd/n-GaAs with different thicknesses of Pd layer, annealed from 300 degrees C to 500 degrees C for 30 min, were investigated. Adhesion of Mo to GaAs has been improved with the interposition of a thin Pd layer. With increasing Pd thickness, wider temperature ranges were achieved in which the contact showed rectifying Schottky behavior. The Schottky barrier heights were nearly constant below 300 degrees C and then dropped sharply at 450 degrees C, except for Mo(2000 AA)/Pd(200 AA)/n-GaAs diodes. The ideality factors converged to nearly unity at 300 degrees C and then increased sharply from 300 to 500 degrees C, except for Mo(2000 AA)/Pd(200 AA)/n-GaAs diodes, which maintained a nearly constant value of 1.34 from 400 to 500 degrees C.<>

Keywords

Schottky-barrier diodes; gallium arsenide; molybdenum; palladium; semiconductor technology; semiconductor-metal boundaries; 200 A; 30 min; 300 to 500 C; Mo-GaAs contacts; Mo-Pd-GaAs contacts; Pd thickness; Schottky barrier heights; adhesion; electrical properties; ideality factors; limited reaction; n-GaAs contacts; rectifying Schottky behavior; stability problems; structure properties; temperature ranges; thicknesses of Pd layer; Adhesives; Annealing; Degradation; Gallium arsenide; Schottky barriers; Schottky diodes; Surface cracks; Surface morphology; Temperature; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.728

Filename

728