• DocumentCode
    1441498
  • Title

    In-flight observations of multiple-bit upset in DRAMs

  • Author

    Swift, Gary M. ; Guertin, Steven M.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2386
  • Lastpage
    2391
  • Abstract
    In interplanetary space, the Cassini solid-state recorder is experiencing the predicted number of upsets, but a very high rate of uncorrectable errors. An experimental investigation of the flight DRAMs susceptibility to multiple-bit upset (MBU) proved enlightening, revealing an unexpectedly high rate of MBUs (even caused by protons). In combination with an architectural flaw in the error correction circuitry, these explain the flight anomaly
  • Keywords
    DRAM chips; error correction; ion beam effects; proton effects; space vehicle electronics; Cassini spacecraft; DRAM; error correction circuit; heavy ion irradiation; in-flight testing; multiple-bit upset; proton irradiation; solid-state recorder; Error analysis; Error correction; Manufacturing; Packaging; Propulsion; Protons; Random access memory; Single event transient; Solid state circuits; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.903781
  • Filename
    903781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1441498