Energy dependence of proton damage in AlGaAs light-emitting diodes

Author

Reed, Robert A. ; Marshall, Paul W. ; Marshall, Cheryl J. ; Ladbury, Ray L. ; Kim, Hak S. ; Nguyen, Loc Xuan ; Barth, Janet L. ; LaBel, Kenneth A.

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2492

Lastpage

2499

Abstract

We measure the energy dependence of proton-induced LED degradation using large numbers of devices and incremental exposures to gain high confidence in the proton energy dependence and device-to-device variability of damage. We compare single versus double heterojunction AlGaAs technologies (emitting at 880 nm and 830 nm, respectively) to previous experimental and theoretical results. We also present a critical review of the use of nonionizing energy loss in AlGaAs for predictions of on-orbit degradation and assess the uncertainties inherent in this approach

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; proton effects; radiation hardening (electronics); space vehicle electronics; 830 nm; 880 nm; AlGaAs; device-to-device variability; double heterojunction; energy dependence; incremental exposures; light-emitting diodes; nonionizing energy loss; on-orbit degradation; output power dependence; proton damage; proton-induced degradation; single heterojunction; uncertainties; Degradation; Energy loss; Energy measurement; Gallium arsenide; Light emitting diodes; NASA; Protons; Satellites; Space technology; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903798

Filename

903798