Characterization of proton damage in light-emitting diodes

Author

Johnston, A.H. ; Miyahira, T.F.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2500

Lastpage

2507

Abstract

Proton damage is investigated for several types of modern light-emitting diodes (LEDs), examining the damage from the standpoint of older models based on lifetime degradation as well as the simpler method of normalized degradation. An empirical model is developed to describe injection-enhanced annealing in amphoterically doped LEDs. Experimental results on “aged” devices show that wearout degradation does not decrease the sensitivity of devices to radiation damage

Keywords

annealing; carrier lifetime; light emitting diodes; proton effects; radiation hardening (electronics); semiconductor device models; space vehicle electronics; I-V characteristics; aged devices; amphoterically doped LED; diffusion-limited damage; displacement damage; empirical model; energy dependence; injection-enhanced annealing; lifetime degradation; light-emitting diodes; normalized degradation; proton damage; radiation damage sensitivity; space qualified devices; wearout degradation; Annealing; Current measurement; Degradation; Electronics packaging; Light emitting diodes; NASA; Propulsion; Protons; Silicon; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903799

Filename

903799